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| HP4410DY Data Sheet August 1999 File Number 4468.4 10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Features * Logic Level Gate Drive * 10A, 30V * rDS(ON) = 0.0135 at ID = 10A, VGS = 10V * rDS(ON) = 0.020 at ID = 8A, VGS = 4.5V * Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol Ordering Information PART NUMBER HP4410DY PACKAGE SO-8 BRAND P4410DY SOURCE(1) DRAIN(8) SOURCE(2) DRAIN(7) NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HP4410DYT. SOURCE(3) DRAIN(6) GATE(4) DRAIN(5) Packaging SO-8 8-3 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 HP4410DY Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified HP4410DY Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (10s Pulse Width) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 30 30 16 10 50 2.5 0.02 -55 to 150 300 260 UNITS V V V A A W W/oC oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TA = 25oC to 125oC. Electrical Specifications PARAMETER TA = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250A, VGS = 0V VGS = VDS, ID = 250A (Figure 9) VDS = 30V, VGS = 0V VDS = 30V, VGS = 0V, TA = 55oC MIN 30 1 VDS = 15V, VGS = 10V, ID 10A VDS = 25V, VGS = 0V, f = 1MHz (Figure 4) Pulse Width < 10s (Figure 11) Device Mounted on FR-4 Material TYP 0.015 0.011 15 9 70 20 35 7.5 5.8 1600 685 115 MAX 1 25 100 0.020 0.0135 30 20 100 80 60 50 UNITS V V A A nA ns ns ns ns nC nC nC pF pF pF oC/W Drain to Source Breakdown Voltage Gate to Source Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance IGSS rDS(ON) VGS = 16V ID = 8A, VGS = 4.5V (Figures 6, 8) ID = 10A, VGS = 10V (Figures 6, 8) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Ambient td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS RJA VDD = 25V, ID 1A, RL = 25, VGEN = 10V, RGS = 6 Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS ISD = 2.3A (Figure 7) ISD = 2.3A, dISD/dt = 100A/s MIN TYP 0.75 50 MAX 1.1 80 UNITS V ns 8-4 HP4410DY Typical Performance Curves 50 VGS = 10V - 5V 4V ID, DRAIN CURRENT (A) Unless Otherwise Specified 50 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 40 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) 40 30 3V 20 30 20 10 10 TA = 125oC -55oC 25oC 0 0 2 4 6 8 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 1. OUTPUT CHARACTERISTICS FIGURE 2. TRANSFER CHARACTERISTICS 0.030 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX rDS(ON), DRAIN TO SOURCE ON STATE RESISTANCE (W) 0.025 C, CAPACITANCE (pF) 0.020 VGS = 4.5V 0.015 0.010 0.005 0 0 10 20 30 40 50 ID, DRAIN CURRENT (A) VGS = 10V 4200 3500 2800 2100 1400 COSS 700 0 0 6 12 18 24 VDS , DRAIN TO SOURCE VOLTAGE (V) 30 CRSS VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS = CDS + CGD CISS FIGURE 3. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 4. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 10 VGS , GATE TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON RESISTANCE VDS = 15V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX ID = 10A 8 2.0 VGS = DURATION = 80s PULSE 10V DUTY CYCLE = 0.5% MAX ID = 10A 1.5 6 1.0 4 2 0.5 0 0 9 18 27 36 45 Qg, GATE CHARGE (nC) 0 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 150 FIGURE 5. GATE TO SOURCE VOLTAGE vs GATE CHARGE FIGURE 6. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 8-5 HP4410DY Typical Performance Curves 50 ISD, SOURCE TO DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX rDS(ON), DRAIN TO SOURCE ON STATE RESISTANCE (W) 0.08 Unless Otherwise Specified (Continued) 0.10 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TJ = 150oC 10 TJ = 25oC 0.06 ID = 10A 0.04 0.02 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, SOURCE TO DRAIN VOLTAGE (V) 0 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 7. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE TO SOURCE VOLTAGE 0.4 0.2 VGS(TH) VARIANCE (V) 80 60 0.0 ID = 250A -0.2 -0.4 -0.6 -0.8 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 0 0.01 POWER (W) 40 20 0.10 1.00 t, PULSE WIDTH (s) 10.00 FIGURE 9. GATE THRESHOLD VOLTAGE VARIANCE vs JUNCTION TEMPERATURE FIGURE 10. SINGLE PULSE POWER CAPABILITY vs PULSE WIDTH 2 1 THERMAL IMPEDANCE DUTY CYCLE = 0.5 0.2 0.1 0.1 0.05 0.02 SINGLE PULSE 0.01 10-4 10-3 10-2 10-1 1 t1 t2 DUTY CYCLE, D = t1/t2 TJ = PD x ZJA x RJA + TA SURFACE MOUNTED 10 30 PDM ZJA, NORMALIZED t, RECTANGULAR PULSE DURATION (s) FIGURE 11. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 8-6 HP4410DY Test Circuits and Waveforms VDS tON td(ON) RL VDS + tOFF td(OFF) tr tf 90% 90% VGS DUT RGS VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 12. SWITCHING TIME TEST CIRCUIT FIGURE 13. SWITCHING TIME WAVEFORM VDS RL VDD Qg Qgd Qgs VGS VGS + VDD DUT Ig(REF) Ig(REF) 0 0 VDS FIGURE 14. GATE CHARGE TEST CIRCUIT FIGURE 15. GATE CHARGE WsAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 8-7 |
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